PART |
Description |
Maker |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
Q62702-A3471 BAW78M |
From old datasheet system Silicon Switching Diode (Switching applications High breakdown voltage)
|
SIEMENS[Siemens Semiconductor Group]
|
2SC3376 E000838 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS) From old datasheet system SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc. STMicroelectronics
|
RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
RM400DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
RM600DY-66S |
HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module
|
Mitsubishi Electric Semiconductor
|
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
BAS70-06S Q62702-A3469 BAS7006S |
From old datasheet system Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping)
|
http:// SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|